Q.1.
In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.
Q.2.
The dynamic resistance of a forward biased p-n diode
Q.3.
Each cell of a static Random Access memory contains
Q.4.
Power diodes are generally
Q.5.
Which variety of copper has the best conductivity?
Q.6.
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
Q.7.
What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliverW of d.c. power to the load?
Q.8.
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
Q.9.
Fermi level is the amount of energy in which
Q.10.
In monolithic ICs, all the components are fabricated by
Q.11.
In which of these is reverse recovery time nearly zero?
Q.12.
Which one of the following is not a characteristic of a ferroelectric material?
Q.13.
Permalloy is
Q.14.
The most commonly used semiconductor material is
Q.15.
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
Q.16.
Forbidden energy gap in germanium at 0 K is about
Q.17.
In the sale of diamonds the unit of weight is carat. One carat is equal to
Q.18.
Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.
Q.19.
In a semiconductor diode, the barrier offers opposition to
Q.20.
As compared to bipolar junction transistor, a FET