Practice Electronic Devices And Circuits Multiple Choice Questions with Answers Quiz-5 - MCQGeeks.com

Q.1.

Silicon is not suitable for fabrication of light emitting diodes because it is

An indirect band gap semiconductor
Direct band gap semiconductor
Wideband gap semiconductor
Narrowband gap semiconductor

Q.2.

Each cell of a static Random Access memory contains

6 MOS transistor
4 MOS transistor, 2 capacitor
2 MOS transistor, 4 capacitor
1 MOS transistor and 1 capacitor

Q.3.

The dynamic resistance of a forward biased p-n diode

Varies inversely with current
Varies directly with current
Is constant
Is either constant or varies directly with current

Q.4.

In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.

Reverse, voltage
Forward, current
Forward, voltage
Reverse, current

Q.5.

A thermistor is a

Thermocouple
Thermometer
Miniature resistance
Heat sensitive explosive

Q.6.

For a NPN bipolar transistor, what is the main stream of current in the base region?

Drift of holes
Diffusion of holes
Drift of electrons
Diffusion of electrons

Q.7.

Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

Q.8.

For a P-N diode, the number of minority carriers crossing the junction depends on

Forward bias voltage
Potential barrier
Rate of thermal generation of electron hole pairs
None of the above

Q.9.

An electron in the conduction band

Has higher energy than the electron in the valence band
Has lower energy than the electron in the valence band
Loses its charge easily
Jumps to the top of the crystal

Q.10.

The forbidden energy gap between the valence band and conduction band will be least in case of

Metals
Semiconductors
Insulators
All of the above