Q.1.
A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is ___________
Q.2.
The transconductance of a JFET ranges from ___________
Q.3.
In a p-channel JFET, the charge carriers are ___________
Q.4.
The pinch-off voltage of a JFET is about ___________
Q.5.
For VGS = 0 V, the drain current becomes constant when VDS exceeds
Q.6.
When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage
Q.7.
The channel of a JFET is between the ___________
Q.8.
A MOSFET has ___________ terminals
Q.9.
The input control parameter of a JFET is ___________
Q.10.
The input impedance of a JFET is ___________ that of an ordinary transistor
Q.11.
The gate of a JFET is ___________ biased
Q.12.
A n-channel D-MOSFET with a positive VGS is operating in ___________
Q.13.
A MOSFET uses the electric field of a ___________ to control the channel current
Q.14.
A JFET has three terminals, namely ___________
Q.15.
The source terminal of a JEFT corresponds to ___________ of a vacuum tube
Q.16.
If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________
Q.17.
If the gate of a JFET is made less negative, the width of the conducting channel ___________
Q.18.
If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________
Q.19.
In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________
Q.20.
In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________