Q.1.
A diac has ___________ semiconductor layers
Q.2.
When the temperature increases, the inter-base resistance (RBB) of a UJT ___________.
Q.3.
When the temperature increases, the intrinsic stand off ratio ___________.
Q.4.
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.
Q.5.
When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ___________
Q.6.
The triac is ___________.
Q.7.
Power electronics essentially deals with control of a.c. power at ___________.
Q.8.
A diac is ___________ switch
Q.9.
In a UJT, the p-type emitter is ___________ doped
Q.10.
The device that does not have the gate terminal is ___________.
Q.11.
The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant
Q.12.
The normal way to turn on a diac is by ___________.
Q.13.
Which of the following is not a characteristic of UJT?
Q.14.
A UJT is sometimes called ___________ diode.
Q.15.
A diac is turned on by ___________.
Q.16.
A triac is equivalent to two SCRs ___________.
Q.17.
A diac is simply ___________.
Q.18.
A triac has ___________ semiconductor layers.
Q.19.
A Triac has three terminals viz ___________
Q.20.
A triac can pass a portion of ___________ half-cycle through the load.