In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?
Q.2.
The most commonly used semiconductor in the manufacture of a transistor is ___________
Q.3.
The number of depletion layers in a transistor is ___________
Q.4.
An ideal value of stability factor is ___________
100
200
More than 200
1
Q.5.
The leakage current in CE arrangement is ___________ that in CB arrangement
more than
less than
the same as
none of the above
Q.6.
Most of the majority carriers from the emitter ___________
recombine in the base
recombine in the emitter
pass through the base region to the collector
none of the above
Q.7.
In a tansistor, IC =mA and IE = 100.2 mA. The value of ß is ___________
100
50
about 1
200
Q.8.
If the value of collector current IC increases, then the value of VCE ___________
Remains the same
Decreases
Increases
None of the above
Q.9.
A tuned amplifier is used in ___________ applications
Radio frequency
Low frequency
Audio frequency
None of the above
Q.10.
If Q of an LC circuit increases, then bandwidth ___________
Increases
Decreases
Remains the same
Insufficient data
Q.11.
The power gain in a transistor connected in ___________ arrangement is the highest
common emitter
common base
common collector
none of the above
Q.12.
At series or parallel resonance, the circuit power factor is ___________
0%
5%
10%
8%
Q.13.
The base of a transistor is ___________ doped
heavily
moderately
lightly
none of the above
Q.14.
In a pnp transistor, the current carriers are ___________
acceptor ions
donor ions
free electrons
holes
Q.15.
ICEO = () ICBO
ß
1 + a
1 + ß
none of the above
Q.16.
In a npn transistor, ___________ are the minority carriers
free electrons
holes
donor ions
acceptor ions
Q.17.
A silicon transistor is biased with base resistor method. If ß=VBE =0.7 V, zero signal collector current IC = 1 mA and VCC =, what is the value of the base resistor RB?
105 kΩ
530 kΩ
315 kΩ
None of the above
Q.18.
The biasing circuit has a stability factor ofIf due to temperature change, ICBO changes by 1 µA, then IC will change by ___________
100 µA
25 µA
20 µA
50 µA
Q.19.
Tuned class C amplifiers are used for RF signals of ___________
Low power
High power
Very high power
None of the above
Q.20.
The Q of an LC circuit is given by ___________
2pfr x R
R / 2pfrL
2pfrL / R
R2/2pfrL
Q.21.
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
One hundredth
One tenth
One thousandth
One millionth
Q.22.
For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line
The end point
Middle
The maximum current point
None of the above
Q.23.
In a transistor if ß =and collector current ismA, then IE is ___________
100 mA
10.1 mA
110 mA
none of the above
Q.24.
The Q of a tuned amplifier is generally ___________
Less than 5
Less than 10
More than 10
None of the above
Q.25.
The value of ß for a transistor is generally ___________
1
less than 1
between 20 and 500
above 500
Q.26.
If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________
6 mA
2 mA
3 mA
1 mA
Q.27.
The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________
Limit the maximum emitter current
Provide base-emitter bias
Limit the change in emitter current
None of the above
Q.28.
The voltage gain in a transistor connected in ___________ arrangement is the highest
common base
common collector
common emitter
none of the above
Q.29.
The output impedance of a transistor connected in ___________ arrangement is the highest
common emitter
common collector
common base
none of the above
Q.30.
The input impedance of a transistor connected in ___________ arrangement is the highest
common emitter
common collector
common base
none of the above
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