Q.1.
The transistor in the circuit shown below has kn = 0.4 mA/VVt = 0.5 V and λ =Operation at the edge of saturation is obtained when
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Q.2.
The PMOS transistor in the circuit shown has Vt = −0.7 V, μpCox =μA/VL = 0.8 μm, and λ =Find the value of R in order to establish a drain current of 0.mA and a voltage VD of 3.5 V.
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Q.3.
The NMOS transistors in the circuit shown have Vt = 1 V, μnCOX =μA/Vλ =and L1 = L2 = L3 = 1μm. Then which of the following is not the value of the width of these MOSFETs shown
Q.4.
The MOSFET shown has Vt = 1V, kn = 100µA/V2 and λ =Find the required values of W/L and of R so that when vI = VDD = +5 V, rDS =Ω, and VO =mV.
Q.5.
For each of the circuits shown find the labeled voltages. For all transistors, kn(W/L) = 1 mA/VVt = 2V, and λ =Find V3
Q.6.
For each of the circuits shown find the labeled voltages. For all transistors, kn(W/L) = 1 mA/VVt = 2V, and λ =Find V4 and V5
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Q.7.
For each of the circuits shown find the labeled voltages. For all transistors, kn(W/L) = 1 mA/VVt = 2V, and λ =Find V1 and V2
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Q.8.
For each of the circuits shown find the labeled node voltages. The NMOS transistors have Vt = 1 V and kn( W/L ) = 2 mA/V2 and λ =Find V1 and V2
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Q.9.
For each of the circuits shown find the labeled node voltages. The NMOS transistors have Vt = 1 V and kn( W/L ) = 2 mA/V2 and λ =Find V3 and V4
Q.10.
For the PMOS transistor in the circuit shown kn= 8 µA/VW/L = 25,|Vtp| =and I = 100μA. For what value of R is VSD = VSG?
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