Q.1.

Find current i.

Q.2.

The Nyquist sampling interval, for the signal sine (700t) + sine (500t) is

Q.3.

Assuming the OP-AMP to be ideal, the voltage gain of the amplifier shown in figure is

Q.4.

A series RLC circuit has a resonance frequency of 1 kHz and a quality factor Q =If each of R, L and C is doubled from its original value, the new Q of the circuit is

Q.5.

Which of the following antennas uses a number of varying length parallel elements?

Q.6.

The Nyquist sampling interval, for the signal sine (700t) + sine (500t) is

Q.7.

The system which is unstable is __________ .

Q.8.

VR at t < T, t = ∞

Q.9.

Find current i.

Q.10.

Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side = 1 x 1017 cm-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
Thermal voltage = 26mV
Permittivity of free space = 8.x 10-14F. cm-1.
Dielectric constant of silicon =A built in potential of the junction.

Q.11.

Which of the following capabilities are available in a Universal Shift Register?

  1. Shift left
  2. Shift right
  3. Parallel load
  4. Serial add
Select the correct answer from the codes given below:
Q.12.

For a Hertz dipole antenna, the Half Power Beam Width (HPBW) in the E-plane is

Q.13.

Consider the following, logic diagram :

The count sequence of the above logic diagram is :

Q.14.

Consider the following, logic diagram :

The count sequence of the above logic diagram is :

Q.15.

Find current i.

Q.16.

The system which is unstable is __________ .

Q.17.

The system which is unstable is __________ .

Q.18.

Which of the following antennas uses a number of varying length parallel elements?

Q.19.

The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T =K, electronic charge = 1.6 x 10-19C, thermal voltage = 26mV and electron mobility =cm2/V-s

The magnitude of the electric field at x = 0.5 μm is

Q.20.

Laplace transform of unit triplet function is __________ .

Q.21.

Consider two independent random variables x and y with identical distributions. The variables X and Y take1 and2 with probabilities and respectively. What is the conditional probability P(X + Y =X - Y = 0)?

Q.22.

A 2 μF capacitor is shunted by a 1 k&ohm; maintained at temperatureK. The rms noise voltage across the capacitor over the entire frequency band is:

Q.23.

The input impedance of figure given below is

Q.24.

Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side = 1 x 1017 cm-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 1014F. cm-1.
Thermal voltage = 26mV
Permittivity of free space = 8.x 10-14F. cm-1.
Dielectric constant of silicon =A built in potential of the junction.

Q.25.

Consider the following, logic diagram :

The count sequence of the above logic diagram is :

Q.26.

Laplace transform of unit triplet function is __________ .

Q.27.

The range of memory location in given memory interfacing scheme is

Q.28.

Consider the following, logic diagram :

The count sequence of the above logic diagram is :

Q.29.

Consider two independent random variables x and y with identical distributions. The variables X and Y take1 and2 with probabilities and respectively. What is the conditional probability P(X + Y =X - Y = 0)?

Q.30.

For a Hertz dipole antenna, the Half Power Beam Width (HPBW) in the E-plane is

Q.31.

Consider two independent random variables x and y with identical distributions. The variables X and Y take1 and2 with probabilities and respectively. What is the conditional probability P(X + Y =X - Y = 0)?

Q.32.

A 2 μF capacitor is shunted by a 1 k&ohm; maintained at temperatureK. The rms noise voltage across the capacitor over the entire frequency band is:

Q.33.

Which of the following is not a conducting material?

Q.34.

The input impedance of figure given below is

Q.35.

Which of the following can be used as a tachogenerator in control systems?

Q.36.

An audio signal is to be transmitted digitally. Which is the system best suited for good fidelity?

Q.37.

Which of the following is true?

Q.38.

The dominant mode in a rectangular wave-guide is

Q.39.

The pre-emphasis in FM aids in providing extra noise immunity by

Q.40.

Consider the following statements:

  1. Acceptor level is formed very close to the conduction band.
  2. The effective mass of the free electron is same as that of a hole.
  3. The magnitude of the charge of a free electron is same as that of a hole.
  4. Addition of donor impurities adds holes to the semiconductor.
Which of the above statements are correct?
Q.41.

At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

Q.42.

The full form of the abbreviations TTL and CMOS in reference to logic families are

Q.43.

Consider the following statements:

  1. Taking 2's complement is equivalent to sign change.
  2. In the 2's complement representation the most significant bit (MSB) is zero for a positive number.
  3. In a 4 bit binary representation of a binary number A, A + 1's complement of A = 24.
Which of the above statements are correct?
Q.44.

A standard waveguide W Rhas inside wall dimensions of a = 2.cm and b = 1.cm. What is the cut-off wavelength for TE01 mode?

Q.45.

In a network with twelve circuit elements and five nodes, what is the minimum number of mesh equations?

Q.46.

The resolution of a DAC depends on which of the following?

Q.47.

In which one of the following types of analog to digital converts the conversion time is practically independent of the amplitude of the analog signal?

Q.48.

Consider the following statements:

  1. Strictly speaking C supports 1-dimensional arrays only.
  2. An array element may be an array by itself.
  3. Array elements need not occupy contiguous memory locations.
Which of the above statements is/are correct?
Q.49.

Which of the following oscillators is used for the generation of high frequencies?

Q.50.

Consider the following:

  1. Coupling capacitor
  2. Emitter by-pass capacitor
  3. Emitter to base diffusion capacitance of the BJT
  4. Stray capacitance of the circuit.
Which of these components in a R-C coupled amplifier control the lower cut-off frequency of the amplifier?