Breakdown voltage and pinch-off voltage of a JFET are different terms for the same voltage level.

In a voltage-divider JFET circuit, I_D is a maximum when V_GS = 0 V.

Breakdown voltage and pinch-off voltage of a JFET are different terms for the same voltage level.

Transconductance is also called mutual conductance.

A JFET is very similar to a BJT.

The amount of gate voltage needed to turn the JFET completely off is called V_GS(OFF).

A JFET can be either a current-controlled device or a voltage-controlled device.

A MOSFET has an isolated gate.

The gate-biased JFET characteristic curve includes I_DS.

A common-drain configured JFET is also called a source-follower.

If the drain, source, and channel are all a p-type material, and the transistor operates in both modes, this is a p-channel E-MOSFET.

A JFET has 3 terminals: gate, drain, and source.

An enhancement-type MOSFET or E-MOSFET can be turned on when the channel is depleted.

A D-MOSFET cannot be biased using zero biasing.

The charge carriers in a junction field effect transistor (JFET) will flow from source to drain in a p-channel and from drain to source in an n-channel.

JFET terminal "legs" are connections to the drain, the gate, and the:

When the JFET is no longer able to control the current, this point is called the:

The transconductance curve of a JFET is a graph of:

Which component is considered to be an "OFF" device?

A very simple bias for a D-MOSFET is called: