Q.1.

Which of the following cannot actually move?

Q.2.

How many valence electrons are in every semiconductor material?

Q.3.

When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

Q.4.

Silicon atoms combine into an orderly pattern called a:

Q.5.

In "p" type material, minority carriers would be:

Q.6.

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

Q.7.

What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

Q.8.

What is a type of doping material?

Q.9.

When is a P-N junction formed?

Q.10.

In "n" type material, majority carriers would be:

Q.11.

What can a semiconductor sense?

Q.12.

Ionization within a P-N junction causes a layer on each side of the barrier called the:

Q.13.

The first transistor was invented in 1938.

Q.14.

The n-type semiconductor material is doped by adding material with electron holes.

Q.15.

Reverse bias is a condition that essentially ___________ current through the diode.

Q.16.

The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.

Q.17.

Minority carriers are many times activated by:

Q.18.

A P-N junction mimics a closed switch when it:

Q.19.

Elements with 1, 2, or 3 valence electrons usually make excellent:

Q.20.

When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?