Q.1
Which of the following equation represents mass action law for semiconductors in electronic circuits?
  • a) n × p = ni2
  • b) n × p = ni
  • c) n × p = ni3
  • d) n × p = ni1/2
Q.2
Which of the following is correct about Hall Effect in electronic circuits?
  • a) Hall voltage is very weak in metals as compared to semiconductors
  • b) Hall voltage is directly proportional to the charge density
  • c) Hall voltage is inversely proportional to the intensity of the magnetic field
  • d) Intrinsic semiconductor has a positive temperature coefficient of hall constant
Q.3
Which of the following is not correct about a step-graded junction in electronic devices?
  • a) Diodes with step-graded junctions are slower than a normal diode
  • b) They are designed with abrupt junction
  • c) They are either p+– n or p – n+ junction
  • d) Depletion layer penetrates more into the lightly doped region
Q.4
Which of the following is not an electronic device?
  • a) A mobile
  • b) A computer
  • c) A magnifying glass
  • d) A keyboard
Q.5
Which of the following is not a physical component of an electronic circuit?
  • a) Capacitor
  • b) Inductor
  • c) Diode
  • d) Temperature
Q.6
Which of the following is not a property of semiconductors used in electronic devices?
  • a) They excite electrons
  • b) They don’t emit light
  • c) They have high thermal conductivity
  • d) They have variable electrical conductivity
Q.7
Which of the following is the correct relationship between temperature (T) and mobility (u) of electrons in electronic circuits?
  • a) u ∝ T-3/2
  • b) u ∝ T-1/2
  • c) u ∝ T
  • d) u ∝ T-1
Q.8
What is the effect of temperature on the recombination rate of electrons in electronic circuits?
  • a) Recombination rate increases with increase in the temperature
  • b) Recombination rate decreases with increase in the temperature
  • c) Recombination rate is independent of temperature
  • c) Recombination of electrons doesn’t occur in semiconductors
Q.9
Which of the following is correct about semiconductors in electronic devices?
  • a) Elemental semiconductors have direct band gap
  • b) Compound semiconductors have indirect band gap
  • c) Extrinsic semiconductors are injected with impurities
  • d) Doping is done in Intrinsic semiconductors
Q.10
Which of the following technique can’t be used for generating electron-hole pairs in electronic devices?
  • a) Thermal excitation
  • b) Impact ionization
  • c) Photo excitation
  • d) Impurity injection
Q.11
Which of the following is not correct about semiconductors in electronic devices?
  • a) Electrons are present below Fermi level in a semiconductor
  • b) Degenerated semiconductors behave like a conductor
  • c) Fermi level is independent of temperature and doping
  • d) Pentavalent atoms are used in an n-type extrinsic semiconductor
Q.12
Which of the following is correct about photo diode electronic devices?
  • a) P-N junction is connected in reverse bias.
  • b) Electron-hole pairs are generated by impurity injection in depletion layer
  • c) It is a photovoltaic cell
  • d) No external voltage is applied
Q.13
Which of the following is wrong about solar cell electronic devices?
  • a) Solar cell responsivity is directly proportional to the wavelength of light
  • b) It produces dark current
  • c) It is a photovoltaic cell
  • d) No external voltage is applied
Q.14
What type of semiconductor is used in LED electronic circuits?
  • a) Intrinsic semiconductor
  • b) Compound semiconductor
  • c) Degenerated semiconductor
  • d) Compensated semiconductor
Q.15
Which of the following semiconductor is mostly used to construct electronic circuits?
  • a) Silicon
  • b) Germanium
  • c) Selenium
  • d) Tin
Q.16
Which of the following is correct about NMOS electronic circuits?
  • a) It has N-substrate
  • b) For inversion positive voltage is applied to the gate terminal
  • c) For accumulation positive voltage is applied to the gate terminal
  • d) NMOS has holes as the majority of carriers
Q.17
Which of the following is wrong about threshold voltage (VT) in a MOSFET electronic circuit?
  • a) If VT is less, channel form quickly for conductivity
  • b) VT can be reduced by reducing oxide layer thickness
  • c) VT is independent of ion implementation
  • d) VT can be reduced by reducing substrate doping
Q.18
Which of the following is the correct relationship between trans-conductance (Gm) and drain to source current (IDS) in an NMOS electronic circuit?
  • a) Gm ∝ IDS-3/2
  • b) Gm ∝ IDS-1/2
  • c) Gm ∝ IDS
  • d) Gm ∝ IDS1/2
Q.19
In which of the following region does BJT act as the amplifier electronic device?
  • a) Cut-off
  • b) Saturation
  • c) Active
  • d) Reverse saturation
Q.20
Which type of semiconductor is used in Tunnel Diode?
  • a) Compound semiconductor
  • b) Elemental semiconductor
  • c) Degenerated semiconductor
  • d) Extrinsic semiconductor
0 h : 0 m : 1 s