Q.1
Which of the following is false about Fermi-Dirac distribution function f(E) used to understand semiconductors in electronic circuits?
  • a) f(E) is the probability of finding an electron in an energy level E
  • b) When the temperature decreases f(E) also increases
  • c) f(E) doesn’t give the number of electrons in a given energy level
  • d) f(E) doesn’t give the number of energy levels with electrons
Q.2
An electronic circuit wire of conductivity 5.8 ×mho-m is subjected to an electric field ofmV/m. What will be its current density?
  • a) 2.32 × 106 A/m2
  • b) 1.16 × 106 A/m2
  • c) 4.64 × 106 A/m2
  • d) 4.30 × 106 A/m2
Q.3
Mass action law is not valid for which type of semiconductors in electronic devices?
  • a) Compound
  • b) Elemental
  • c) Degenerative
  • d) Compensated
Q.4
Which of the following is the correct expression of current in an intrinsic semiconductor electronic circuit?
  • a) ITotal = Ie + Ih
  • b) ITotal = Ie – Ih
  • c) ITotal = Ie + 2Ih
  • d) ITotal = 2Ie + Ih
Q.5
When an electronic circuit is in equilibrium then which of the following equation is valid?
  • a) Jdrift + Jdiffusion = 1
  • b) Jdrift + Jdiffusion = 0
  • c) Jdrift + Jdiffusion = -1
  • d) Jdrift + Jdiffusion = 2
Q.6
Which of the following is wrong about P-N junction diodes used in electronic devices?
  • a) They have three modes of operations
  • b) They have dynamic resistance at low-frequency AC voltage
  • c) They have diffusion capacitance at high-frequency AC voltage
  • d) They can act as ON-OFF switches
Q.7
What is the conductivity of an extrinsic type semiconductor electronic device at 0K?
  • a) maximum
  • b) zero
  • c) can’t be determined
  • d) minimum
Q.8
What is the conductivity of an extrinsic type semiconductor electronic device at 300K?
  • a) Maximum
  • b) Zero
  • c) Can’t be determined
  • d) Minimum
Q.9
Which of the following effects is responsible for violating the mass action law in degenerative type semiconductor electronic devices?
  • a) Thermal effect
  • b) Bandgap narrowing effect
  • c) Lattice vibration effect
  • d) Electronic drift effect
Q.10
Which of the following diode is used in ultra-high speed switching electronic circuits?
  • a) Zener diode
  • b) Varactor diode
  • c) Tunnel diode
  • d) Schottky diode
Q.11
Which of the following diode is used in adjustable band pass filter electronic circuits?
  • a) Zener diode
  • b) Varactor diode
  • c) Tunnel diode
  • d) Schottky diode
Q.12
Forbidden Energy gap (EG) of a semiconductor in electronic devices depends on which of the following factors?
  • a) Interatomic distance
  • b) Material constant
  • c) Electron affinity
  • d) Recombination and Generation
Q.13
Which of the following is the correct order of turn-off times?
  • a) MOSFET < BJT < IGBT < SCR
  • b) MOSFET < IGBT < BJT < SCR
  • c) SCR < BJT < IGBT < MOSFET
  • d) BJT < MOSFET < IGBT < SCR
Q.14
Which of the following is correct relation for saturation region in a NMOS electronic circuit?
  • a) VDS >= VG + VT
  • b) VDS >= VG – VT
  • c) VDS <= VG – VT
  • d) VDS >= VG ± VT
Q.15
Which of the following type of transistor is preferred in digital and analog electronic circuits?
  • a) BJT
  • b) JFET
  • c) MOSFET
  • d) FET
Q.16
Which of the following is true about the depletion layer channel in an NMOS electronic circuit?
  • a) Inverted change in the channel increases from source to drain
  • b) Inverted charge remain constant
  • c) Inverted change in the channel decreases from source to drain
  • d) Potential in the channel decreases from source to drain
Q.17
Which of the following is true about Zener diode?
  • a) It is lightly doped
  • b) It is mostly used in voltage regulator electronic circuits
  • c) It is used in forward bias
  • d) It has avalanche breakdown
Q.18
In which region does BJT act as the OFF switch in electronic circuits?
  • a) Cut-off
  • b) Saturation
  • c) Active
  • d) Reverse saturation
0 h : 0 m : 1 s