Q.1.
The arrow direction in the diode symbol indicates
Q.2.
The depletion region contains
Q.3.
In a reverse biased PN junction, the current through the junction increases abruptly at
Q.4.
When the diode is forward biased, it is equivalent to
Q.5.
Main phenomenons associated with formation of p-n junctions are
Q.6.
A forward biased pn junction diode has a resistance of the order of
Q.7.
In Half wave rectifier the diode conducts in only___
Q.8.
The depletion region consists of
Q.9.
Peak inverse voltage for full wave rectifier
Q.10.
The current in a semiconductor is produced by
Q.11.
Which of the following is true in case of an unbiased p-n junction diode?a) b) c)
Q.12.
When PN junction is in forward bias, by increasing the battery voltage
Q.13.
The Value of Barrier Potential for Ge Diode is
Q.14.
The displacement of the charges results in
Q.15.
In a PN junction when the applied voltage overcomes the ........ potential, the diode current is large, which is known as ......
Q.16.
Characteristics of a diode that helps in rectification
Q.17.
Anode is _________ Polarity in diodes
Q.18.
If the positive terminal of the battery is connected to the anode of the diode, then it is known as
Q.19.
The forbiddenn energy gap for Germanium is of the order of
Q.20.
Which of the following is a pentavalent impuity added while forming an extrinsic semiconductor ?