Q.1.
The reverse saturation current in a PN Junction diode is only due to
Q.2.
Which of the below mentioned statements is false regarding a p-n junction diode?
Q.3.
Which of the following is true in case of a forward biased p-n junction diode?
Q.4.
Which of the following results when the equilibrium established in a semiconductor?
Q.5.
Initially, the p-type carriers are located to the____________of the semiconductor
Q.6.
If the voltage of the potential barrier is VA voltage V is applied to the input, at what moment will the barrier disappear?
Q.7.
During reverse bias, a small current develops known as
Q.8.
In a PN junction the potential barrier is due to the charges on either side of the junction, these charges are
Q.9.
What is ripple factor for full wave bridge rectifier
Q.10.
What is the efficiency of full wave rectifier
Q.11.
What is the efficiency of half wave rectifier
Q.12.
In full wave rectifier , for the positive half cycle of AC the diode D1 is____ & diode D2 is ____
Q.13.
Half Wave Rectifier circuit consists of a___
Q.14.
If an external D.C voltage is connected in such a way that the positive terminal is connected to p-region and the negative terminal is connected to n-region , then the diode is said to be in
Q.15.
The value of leakage current in reverse biased condition
Q.16.
Applying External d.c. voltage to any electronic device is called
Q.17.
The depletion layer in reverse biased condition
Q.18.
______ is used as constant voltage source.
Q.19.
Resistors, capacitors, and inductors are example of ____components
Q.20.
Diode is given its name because it's a combination of ____