Practice Vlsi Assessment Multiple Choice Questions with Answers Quiz-1

Q.1.

Depletion mode MESFET operates as

a) reverse biased
b) forward biased
c) both reverse and forward biased
d) none of the mentioned

Explanation

Q.2.

Pinch-off voltage is equal to

a) built-in potential
b) applied voltage
c) sum of built-in potential and applied voltage
d) difference of built-in potential and applied voltage

Explanation

Q.3.

Pinch-off voltage is a function of

a) channel depth
b) channel thickness
c) channel length
d) channel density

Explanation

Q.4.

The threshold voltage is sensitive to

a) channel length
b) channel depth
c) doping density
d) doping of the channel layer

Explanation

Q.5.

The dynamic switching energy must exceed the capacitive load.

a) true
b) false

Explanation

Q.6.

To keep dynamic switching energy small

a) logic voltage swing must be large
b) logic current swing must be large
c) logic voltage swing must be small
d) logic current swing must be small

Explanation

Q.7.

Standard deviation of threshold voltage should be ______ of logic voltage swing.

a) less than 5%
b) more than 5%
c) less than 10%
d) more than 10%

Explanation

Q.8.

In D-MESFET, voltage swing is less than 1V.

a) true
b) false

Explanation

Q.9.

Threshold voltage is ________ on implant depth.

a) proportionally dependent
b) inversely proportionally dependent
c) exponentially dependent
d) logarithmically dependent

Explanation

Q.10.

The drain current is independent of

a) Vgs
b) Vds
c) Vt
d) Vs

Explanation

Q.11.

Impurity concentration should be

a) greater than 20%
b) lesser than 20%
c) greater than 10%
d) lesser than 10%

Explanation

Q.12.

Threshold voltage is independent of pinch-off voltage.

a) true
b) false

Explanation

Q.13.

Pinch-off voltage is ______ to channel concentration density.

a) directly related
b) inversely related
c) exponentially related
d) is not related

Explanation

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