Practice 1000 Electronic Devices Circuits Multiple Choice Questions with Answers Quiz-1

Q.1.

Which of the following equation represents mass action law for semiconductors in electronic circuits?

a) n × p = ni2
b) n × p = ni
c) n × p = ni3
d) n × p = ni1/2

Q.2.

Which of the following is correct about Hall Effect in electronic circuits?

a) Hall voltage is very weak in metals as compared to semiconductors
b) Hall voltage is directly proportional to the charge density
c) Hall voltage is inversely proportional to the intensity of the magnetic field
d) Intrinsic semiconductor has a positive temperature coefficient of hall constant

Q.3.

Which of the following is not correct about a step-graded junction in electronic devices?

a) Diodes with step-graded junctions are slower than a normal diode
b) They are designed with abrupt junction
c) They are either p+– n or p – n+ junction
d) Depletion layer penetrates more into the lightly doped region

Q.4.

Which of the following is not an electronic device?

a) A mobile
b) A computer
c) A magnifying glass
d) A keyboard

Q.5.

Which of the following is not a physical component of an electronic circuit?

a) Capacitor
b) Inductor
c) Diode
d) Temperature

Q.6.

Which of the following is not a property of semiconductors used in electronic devices?

a) They excite electrons
b) They don’t emit light
c) They have high thermal conductivity
d) They have variable electrical conductivity

Q.7.

Which of the following is the correct relationship between temperature (T) and mobility (u) of electrons in electronic circuits?

a) u ∝ T-3/2
b) u ∝ T-1/2
c) u ∝ T
d) u ∝ T-1

Q.8.

What is the effect of temperature on the recombination rate of electrons in electronic circuits?

a) Recombination rate increases with increase in the temperature
b) Recombination rate decreases with increase in the temperature
c) Recombination rate is independent of temperature
c) Recombination of electrons doesn’t occur in semiconductors

Q.9.

Which of the following is correct about semiconductors in electronic devices?

a) Elemental semiconductors have direct band gap
b) Compound semiconductors have indirect band gap
c) Extrinsic semiconductors are injected with impurities
d) Doping is done in Intrinsic semiconductors

Q.10.

Which of the following technique can’t be used for generating electron-hole pairs in electronic devices?

a) Thermal excitation
b) Impact ionization
c) Photo excitation
d) Impurity injection

Q.11.

Which of the following is not correct about semiconductors in electronic devices?

a) Electrons are present below Fermi level in a semiconductor
b) Degenerated semiconductors behave like a conductor
c) Fermi level is independent of temperature and doping
d) Pentavalent atoms are used in an n-type extrinsic semiconductor

Q.12.

Which of the following is correct about photo diode electronic devices?

a) P-N junction is connected in reverse bias.
b) Electron-hole pairs are generated by impurity injection in depletion layer
c) It is a photovoltaic cell
d) No external voltage is applied

Explanation

Q.13.

Which of the following is wrong about solar cell electronic devices?

a) Solar cell responsivity is directly proportional to the wavelength of light
b) It produces dark current
c) It is a photovoltaic cell
d) No external voltage is applied

Q.14.

What type of semiconductor is used in LED electronic circuits?

a) Intrinsic semiconductor
b) Compound semiconductor
c) Degenerated semiconductor
d) Compensated semiconductor

Q.15.

Which of the following semiconductor is mostly used to construct electronic circuits?

a) Silicon
b) Germanium
c) Selenium
d) Tin

Q.16.

Which of the following is correct about NMOS electronic circuits?

a) It has N-substrate
b) For inversion positive voltage is applied to the gate terminal
c) For accumulation positive voltage is applied to the gate terminal
d) NMOS has holes as the majority of carriers

Q.17.

Which of the following is wrong about threshold voltage (VT) in a MOSFET electronic circuit?

a) If VT is less, channel form quickly for conductivity
b) VT can be reduced by reducing oxide layer thickness
c) VT is independent of ion implementation
d) VT can be reduced by reducing substrate doping

Explanation

Q.18.

Which of the following is the correct relationship between trans-conductance (Gm) and drain to source current (IDS) in an NMOS electronic circuit?

a) Gm ∝ IDS-3/2
b) Gm ∝ IDS-1/2
c) Gm ∝ IDS
d) Gm ∝ IDS1/2

Q.19.

In which of the following region does BJT act as the amplifier electronic device?

a) Cut-off
b) Saturation
c) Active
d) Reverse saturation

Q.20.

Which type of semiconductor is used in Tunnel Diode?

a) Compound semiconductor
b) Elemental semiconductor
c) Degenerated semiconductor
d) Extrinsic semiconductor

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