Practice 1000 Electronic Devices Circuits Multiple Choice Questions with Answers Quiz-2

Q.1.

Which of the following is false about Fermi-Dirac distribution function f(E) used to understand semiconductors in electronic circuits?

a) f(E) is the probability of finding an electron in an energy level E
b) When the temperature decreases f(E) also increases
c) f(E) doesn’t give the number of electrons in a given energy level
d) f(E) doesn’t give the number of energy levels with electrons

Q.2.

An electronic circuit wire of conductivity 5.8 ×mho-m is subjected to an electric field ofmV/m. What will be its current density?

a) 2.32 × 106 A/m2
b) 1.16 × 106 A/m2
c) 4.64 × 106 A/m2
d) 4.30 × 106 A/m2

Q.3.

Mass action law is not valid for which type of semiconductors in electronic devices?

a) Compound
b) Elemental
c) Degenerative
d) Compensated

Q.4.

Which of the following is the correct expression of current in an intrinsic semiconductor electronic circuit?

a) ITotal = Ie + Ih
b) ITotal = Ie – Ih
c) ITotal = Ie + 2Ih
d) ITotal = 2Ie + Ih

Q.5.

When an electronic circuit is in equilibrium then which of the following equation is valid?

a) Jdrift + Jdiffusion = 1
b) Jdrift + Jdiffusion = 0
c) Jdrift + Jdiffusion = -1
d) Jdrift + Jdiffusion = 2

Q.6.

Which of the following is wrong about P-N junction diodes used in electronic devices?

a) They have three modes of operations
b) They have dynamic resistance at low-frequency AC voltage
c) They have diffusion capacitance at high-frequency AC voltage
d) They can act as ON-OFF switches

Q.7.

What is the conductivity of an extrinsic type semiconductor electronic device at 0K?

a) maximum
b) zero
c) can’t be determined
d) minimum

Q.8.

What is the conductivity of an extrinsic type semiconductor electronic device at 300K?

a) Maximum
b) Zero
c) Can’t be determined
d) Minimum

Q.9.

Which of the following effects is responsible for violating the mass action law in degenerative type semiconductor electronic devices?

a) Thermal effect
b) Bandgap narrowing effect
c) Lattice vibration effect
d) Electronic drift effect

Q.10.

Which of the following diode is used in ultra-high speed switching electronic circuits?

a) Zener diode
b) Varactor diode
c) Tunnel diode
d) Schottky diode

Q.11.

Which of the following diode is used in adjustable band pass filter electronic circuits?

a) Zener diode
b) Varactor diode
c) Tunnel diode
d) Schottky diode

Q.12.

Forbidden Energy gap (EG) of a semiconductor in electronic devices depends on which of the following factors?

a) Interatomic distance
b) Material constant
c) Electron affinity
d) Recombination and Generation

Q.13.

Which of the following is the correct order of turn-off times?

a) MOSFET < BJT < IGBT < SCR
b) MOSFET < IGBT < BJT < SCR
c) SCR < BJT < IGBT < MOSFET
d) BJT < MOSFET < IGBT < SCR

Q.14.

Which of the following is correct relation for saturation region in a NMOS electronic circuit?

a) VDS >= VG + VT
b) VDS >= VG – VT
c) VDS <= VG – VT
d) VDS >= VG ± VT

Q.15.

Which of the following type of transistor is preferred in digital and analog electronic circuits?

a) BJT
b) JFET
c) MOSFET
d) FET

Q.16.

Which of the following is true about the depletion layer channel in an NMOS electronic circuit?

a) Inverted change in the channel increases from source to drain
b) Inverted charge remain constant
c) Inverted change in the channel decreases from source to drain
d) Potential in the channel decreases from source to drain

Q.17.

Which of the following is true about Zener diode?

a) It is lightly doped
b) It is mostly used in voltage regulator electronic circuits
c) It is used in forward bias
d) It has avalanche breakdown

Q.18.

In which region does BJT act as the OFF switch in electronic circuits?

a) Cut-off
b) Saturation
c) Active
d) Reverse saturation

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